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| Datasheet File OCR Text: |
| NTE459 N-Channel Silicon JFET Transistor AF Amplifier/Chopper/Switch Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Drain-Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Drain-Gate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Gate-Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -50V Drain Current, ID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA Total Device Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2mW/C Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +200C Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter OFF Characteristics Gate-Source Breakdown Voltage Gate Reverse Current V(BR)GSS IG = -1A, VDS = 0 IGSS VGS(off) VGS IDSS |yfs| VGS = -30V, VDS = 0 VGS = -30V, VDS = 0, TA = +150C Gate-Source Cutoff Voltage Gate-Source Voltage ON Characteristics Zero-Gate-Voltage Drain Current Small-Signal Characteristics Forward Transfer Admittance VDS = 15V, VGS = 0, f = 1kHz, Note 1 VDS = 15V, VGS = 0, f = 100MHz Output Admittance Input Capacitance Reverse Transfer Capacitance |yos| Ciss Crss VDS = 15V, VGS = 0, f = 1kHz, Note 1 VDS = 15V, VGS = 0, f = 1MHz VDS = 15V, VGS = 0, f = 1MHz 3000 3000 - - - - - - - - 6500 - 20 6 3 mho mho mho pF pF VDS = 15V, VGS = 0, Note 1 2 - 10 mA ID = 0.5nA, VDS = 15V ID = 200A, VDS = 15V -50 - - - -1 - - - - - - -0.1 -100 -6 -4 V nA nA V V Symbol Test Conditions Min Typ Max Unit Note 1. Pulse Test: Pulse Width 100ms, Duty Cycle 10%. Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified) Parameter Functional Characteristics Noise Figure Equivalent Short-Circuit Input Noise Voltage NF en VDS = 15V, VGS = 0, RG = 1M, f = 10Hz, BW = 5Hz VDS = 15V, VGS = 0, f = 10Hz, BW = 5Hz - - - - 5 200 dB nV/Hz1/2 Symbol Test Conditions Min Typ Max Unit .220 (5.58) Dia .185 (4.7) Dia .190 (4.82) .030 (.762) .500 (12.7) Min .018 (0.45) Dia Drain Source Gate 45 Case .040 (1.02) |
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